Semiconductor device and manufacturing method of the same

A method for manufacturing an electronic device comprising:

• a transistor including a first insulating film and a first semiconductor region;
• and
• a capacitor including a first conductive layer and the first insulating film;
• the method comprising:
• forming a first conductive film;
• forming a gate electrode and the first conductive layer by using the first conductive film;
• forming the first insulating film at least over the gate electrode and the first conductive layer;
• forming a semiconductor film over the first insulating film,
• forming the first semiconductor region by using the semiconductor film;
• forming a second insulating film over at least the first insulating film and the first semiconductor region;
• forming a channel protecting layer by using the second insulating film;
• forming a second conductive film over at least the channel protecting layer and the first semiconductor region;
• forming a source electrode over at least the first semiconductor region, a drain electrode over at least the first semiconductor region and a second conductive layer over at least the first conductive layer;
• forming a third insulating film over at least the source electrode, the drain electrode and the second conductive layer;
• forming a contact hole in the third insulating film;
• and
• forming a third conductive film over at least the third insulating film, the third conductive film being electrically connected to one of the source electrode and the drain electrode by the contact hole.

A method for manufacturing an electronic device comprising:

• a transistor including a first insulating film, a first semiconductor region over the first insulating film and a channel protecting layer over the first semiconductor region;
• and
• a capacitor including a first conductive layer, the first insulating film over the first insulating film and a second conductive layer over the first insulating film;
• the method comprising:
• forming a first conductive film;
• forming the first insulating film;
• forming a semiconductor film,
• forming a second insulating film;
• forming a second conductive film;
• forming a third insulating film;
• forming a third conductive film,
• wherein a gate electrode and the first conductive layer are formed by using the first conductive film,
• wherein the first semiconductor region is formed by using the semiconductor film,
• wherein the channel protecting layer is formed by using the second insulating film,
• wherein a source electrode over the first semiconductor region, a drain electrode over the first semiconductor region and the second conductive layer over the first conductive layer are formed by using the second conductive film,
• wherein a contact hole is formed in the third insulating film, and
• wherein the third conductive film is electrically connected to one of the source electrode and the drain electrode by the contact hole.