Method for fabricating semiconductor device
OwnerJung Woo PARKinventor
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a first insulation layer over a bottom layer, selectively removing a portion the first insulation layer to form a first trench that exposes the bottom layer, forming spacers on inner sidewalls of the first trench; forming a pillar-shaped second insulation layer in the first trench between the spacers, removing the spacers to form a second trench between the pillar-shaped second insulation layer and the first insulation layer, and burying a conductive layer in the second trench.
Claims11
A method for fabricating a semiconductor device, comprising:
- forming a first insulation layer over a bottom layer;
- selectively removing a portion the first insulation layer to form a first trench that exposes the bottom layer;
- forming spacers on inner sidewalls of the first trench;
- forming a pillar-shaped second insulation layer in the first trench between the spacers;
- removing the spacers to form a second trench between the pillar-shaped second insulation layer and the first insulation layer;
- and
- burying a conductive layer in the second trench.
A method for fabricating a semiconductor device, comprising:
- forming a first insulation layer over a bottom layer;
- selectively removing a portion of the first insulation layer to form a first trench that exposes the bottom layer;
- forming conductive spacers on inner sidewalls of the first trench;
- forming a pillar-shaped second insulation layer in the first trench between the conductive spacers;
- and
- performing a planarization process on upper portions of the first insulation layer, the pillar-shaped second insulation layer, and the conductive spacers.
Dependencies are inferred from the claim text.