A pattern forming process comprising the steps of applying a resist composition comprising a polymer adapted to undergo deprotection reaction under the action of an acid, to form a hydroxyl group, which in turn, reacts with any neighboring ester or acid anhydride to form a lactone ring so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film in an organic solvent-based developer to form a negative pattern wherein the unexposed region of film is dissolved away and the exposed region of film is not dissolved.