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US 2013/0157177 A1Published application
Euv mask and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Fang Yu, Ting-Hao Hsu, Sheng-Chi Chin
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Abstract
An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.
Claims20
An extreme ultraviolet (EUV) mask comprising:
- a substrate;
- a reflective multilayer (ML) over the substrate;
- a capping layer over on the reflective ML;
- and
- an absorption pattern over the capping layer, wherein the absorption pattern includes an antireflection (ARC) pattern.
2 more elements
An extreme ultraviolet (EUV) mask comprising:
- a low thermal expansion material (LTEM) substrate;
- a reflective multilayer (ML) of molybdenum-silicon (Mo/Si) disposed on the LTEM substrate;
- a ruthenium (Ru) capping layer disposed on the ML;
- a patterned low reflectivity tantalum boron nitride (LR-TaBNIn) absorption layer disposed on the Ru capping layer, wherein the pattern defines a plurality of reflective regions and absorptive regions, and the pattern includes a plurality of ARC trenches in the absorptive region.
1 more element
A method of forming an extreme ultraviolet (EUV) mask comprising:
- providing a low thermal expansion material (LTEM) substrate;
- coating a conductive chromium nitride (CrN) layer coated at the bottom surface;
- depositing a reflective multilayer (ML) of forty-pairs of molybdenum-silicon (Mo/Si) disposed on the LTEM substrate;
- depositing a ruthenium (Ru) capping layer disposed on the ML;
- patterning a low reflectivity tantalum boron nitride (LR-TaBNIn) absorption layer on the Ru capping layer, wherein a plurality of reflective regions and absorptive regions are formed by the patterning, and a plurality of ARC trenches are formed in the absorptive region by the patterning, the ARC trenches having a depth to produce destructive interference among reflected light rays from the absorptive regions.
2 more elements
Dependencies are inferred from the claim text.