Electrical storage device temperature measuring method
AssigneeAlps Green Devices Co., Ltd.
InventorHiroyuki HEBIGUCHI
Life of this patent
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Abstract
An internal impedance of an electrical storage device is measured by using a signal of a frequency which ions in the electrical storage device are difficult to follow (e.g., a frequency equal to or higher than 10 kHz), and an internal temperature of the electrical storage device is calculated from a measured value of the internal impedance.
Claims15
An electrical storage device temperature measuring method comprising:
- measuring an internal impedance of an electrical storage device by using a signal of a frequency which ions in the electrical storage device are difficult to follow;
- and
- calculating an internal temperature of the electrical storage device from a measured value of the internal impedance.
An electrical storage device temperature measuring method comprising:
- measuring an internal impedance of an electrical storage device by using a signal of a frequency equal to or higher than 10 kHz;
- and
- calculating an internal temperature of the electrical storage device from a measured value of the internal impedance.
An electrical storage device temperature measuring method comprising:
- measuring an internal impedance of an electrical storage device by using a signal of a frequency in which an inductance component of the internal impedance of the electrical storage device is more dominant than a capacitance component thereof;
- and
- calculating an internal temperature of the electrical storage device from a measured value of the internal impedance.
An electrical storage device temperature measuring method comprising:
- measuring an internal impedance of an electrical storage device by using a signal of a frequency in which a resistance component of the internal impedance of the electrical storage device is increased with increase in a temperature;
- and
- calculating an internal temperature of the electrical storage device from a measured value of the internal impedance.
Dependencies are inferred from the claim text.