Ddr 2d vref training
AssigneeAdvanced Micro Devices, Inc.
InventorsKevin M. Brandl, Oswin E. Housty, Gerald Talbot
Life of this patent
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AssigneeAdvanced Micro Devices, Inc.
InventorsKevin M. Brandl, Oswin E. Housty, Gerald Talbot
Estimating the term…
A method is provided for performing memory operations in response to instructions to perform a double data rate (DDR) memory reference voltage training in the voltage domain by a processing device and determining a DDR memory reference voltage and a DDR memory delay time based upon the memory operation. Computer readable storage media are also provided. A circuit is provided that includes a communication interface portion coupled to a memory and to a processing device. The circuit also includes a circuit portion, coupled to the communication interface portion that has a hardware state machine or an algorithm. The state machine or algorithm provides instructions to the processing device to perform a double data rate (DDR) reference voltage training in the voltage domain.
A method, comprising:
A non-transitory, computer-readable storage device encoded with data that, when executed by a processing device, adapts the processing device to perform a method, comprising:
A circuit that comprises:
Dependencies are inferred from the claim text.