Apparatuses and methods for comparing a current representative of a number of failing memory cells
AssigneeMicron Technology, Inc.
InventorJae-Kwan Park
Life of this patent
Estimating the term…
Abstract
Apparatuses and methods for comparing a sense current representative of a number of failing memory cells of a group of memory cells and a reference current representative of a reference number of failing memory cells is provided. One such apparatus includes a comparator configured to receive the sense current and to receive the reference current. The comparator includes a sense current buffer configured to buffer the sense current and the comparator is further configured to provide an output signal having a logic level indicative of a result of the comparison.
Claims41
An apparatus, comprising:
- a comparator configured to receive a sense current representative of a number of failing memory cells of a group of memory cells and to receive a reference current representative of a reference number of failing memory cells, the comparator comprising a sense current buffer configured to buffer the sense current and wherein the comparator is further configured to provide an output signal having a logic level indicative of a result of the comparison.
An apparatus, comprising:
- a comparator including an amplifier having a sense node and a reference node, and further including a sense node buffer coupled to the sense node, wherein the sense node buffer is configured to receive a sense current and buffer the same to provide a buffered sense current to the sense node, and wherein the amplifier is configured to amplify a difference between the buffered sense current and a reference current provided to the reference node, wherein the comparator is configured to provide an output indicative of the magnitude of the buffered sense current relative to the reference current.
A method, comprising:
- comparing a buffered sense current representative of a number of failing memory cells for a group of memory cells and a reference current representative of a reference number of failing memory cells;
- and
- providing a signal having a logic level indicative of the number of failing memory cells for the group of memory cells relative to the reference number of failing memory cells.
Dependencies are inferred from the claim text.