Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorJong Soon LEEM
Life of this patent
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Abstract
In a semiconductor memory device and a method of operating the same, a memory block including memory cells is divided into memory groups. A level of bit line voltage applied to a bit line coupled to the memory cells included in each of the memory groups varies according to a distance between a row decoder and each memory groups during a program operation. Characteristics of the threshold voltage distribution of the memory cells in the semiconductor memory device may be improved without deteriorating performance of the program.
Claims15
A method of semiconductor memory device comprising:
- a memory block having memory groups, each including cell strings coupled to word lines;
- a row decoder configured to apply a program voltage to a selected word line during a program operation;
- and
- a bit line voltage supply circuit configured to apply a bit line voltage into a bit line coupled to a program target cell determined according to input data among memory cells coupled to the selected word line, wherein a level of the bit line voltage varies according to a distance between the row decoder and the memory group including the program target cell.
A semiconductor memory device comprising:
- a memory block having memory groups, each including cell strings coupled to word lines;
- a row decoder configured to apply a program voltage to a selected word line among the word lines during a program operation;
- page buffer groups including page buffers for applying a reference voltage to a bit line coupled to a program target cell determined according to input data among memory cells coupled to the selected word line;
- and
- a reference voltage supply circuit configured to provide the reference voltage to the page buffer groups corresponding to the memory groups, wherein a level of the reference voltage varies according to a distance between the row decoder and the memory group including the program target cell.
A method of operating a semiconductor memory device, the method comprising:
- applying a first voltage to a bit line coupled to a program target cell among first memory cells coupled to a selected word line in a first memory group;
- applying a second voltage, different from the first voltage, to a bit line coupled to another program target cell among second memory cells coupled to the selected word line in a second memory group;
- and
- performing a program operation of storing data in the first and the second memory cells by providing a program voltage to the selected word line and applying a pass voltage to other word lines.
Dependencies are inferred from the claim text.