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US 2013/0155755 A1Published application
Resistive memory apparatus
AssigneeSK hynix Inc.
InventorsChul Hyun PARK, Taek Sang SONG
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Abstract
A resistive memory apparatus includes a sensing voltage generation unit and a memory cell. The sensing voltage generation unit configured to drive a sensing node to a voltage with a predetermined level in response to a reference voltage and a voltage of the sensing node. The memory cell is connected with the sensing node and configured to change a magnitude of current flowing through the sensing node according to a resistance value thereof.
Claims20
A resistive memory apparatus comprising:
- a sensing voltage generation unit configured to drive a sensing node to a voltage with a predetermined level in response to a reference voltage and a voltage of the sensing node;
- and
- a memory cell connected with the sensing node and configured to change a magnitude of current flowing through the sensing node according to a resistance value thereof.
A resistive memory apparatus comprising:
- a sensing voltage generation unit configured to drive a sensing node to a voltage with a predetermined level in response to a reference voltage and a voltage of the sensing node;
- a memory cell connected with the sensing node and configured to generate sensing current according to a resistance value thereof;
- and
- an output signal generation unit configured to sense a magnitude of copied current generated by copying the sensing current, and generate a data output signal.
1 more element
Dependencies are inferred from the claim text.