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US 2013/0155745 A1Published application
Power semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTomofumi Tanaka, Toru Iwagami
Life of this patent
Estimating the term…
Abstract
Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.
Claims14
A power semiconductor device comprising, in a modularized manner:
- an inverter including first and second switching parts that operate in a complementary manner, said first and second switching parts being interposed in series with each other between a first power supply line that supplies a first voltage and a second power supply line that supplies a second voltage;
- and
- first and second control circuits for controlling switching operations of said first and second switching parts, respectively,
- wherein
- said first switching part includes a first IGBT and a first MOSFET, one main electrode of each of said first IGBT and said first MOSFET being connected to said first power supply line and the other main electrode of each of said first IGBT and said first MOSFET being connected to an output node of said inverter,
- said second switching part includes a second IGBT and a second MOSFET, one main electrode of each of said second IGBT and said second MOSFET being connected to said second power supply line and the other main electrode of each of said second IGBT and said second MOSFET being connected to said output node of said inverter,
- in a plane layout of said power semiconductor device:
- said first control circuit is arranged at a position opposed to said first switching part, and one of said first IGBT and said first MOSFET is arranged near said first control circuit while the other of said first IGBT and said first MOSFET is arranged at a position farther from said first control circuit;
- and
- said second control circuit is arranged at a position opposed to said second switching part, and one of said second IGBT and said second MOSFET is arranged near said second control circuit while the other of said second IGBT and said second MOSFET is arranged at a position farther from said second control circuit,
- in said first IGBT and said first MOSFET, a transistor arranged near said first control circuit gives, through a gate thereof, a gate control signal supplied from said first control circuit to a gate of a transistor arranged at the position farther from said first control circuit,
- in said second IGBT and said second MOSFET, a transistor arranged near said second control circuit gives, through a gate thereof, a gate control signal supplied from said second control circuit to a gate of a transistor arranged at the position farther from said second control circuit.
9 more elements
A power semiconductor device comprising, in a modularized manner:
- an inverter including first and second switching parts that operate in a complementary manner, said first and second switching parts being interposed in series with each other between a first power supply line that supplies a first voltage and a second power supply line that supplies a second voltage;
- and
- first and second control circuits for controlling switching operations of said first and second switching parts, respectively,
- wherein
- said first switching part includes a first IGBT and a first MOSFET, one main electrode of each of said first IGBT and said first MOSFET being connected to said first power supply line and the other main electrode of each of said first IGBT and said first MOSFET being connected to an output node of said inverter,
- said second switching part includes a second IGBT and a second MOSFET, one main electrode of each of said second IGBT and said second MOSFET being connected to said second power supply line and the other main electrode of each of said second IGBT and said second MOSFET being connected to said output node of said inverter,
- a gate control signal supplied from said first control circuit is given to a gate of said first IGBT through a first resistive element,
- said gate control signal supplied from said first control circuit is given to said first MOSFET through a second resistive element,
- a resistance value of said second resistive element is higher than a resistance value of said first resistive element, and a diode is connected in inverse parallel with said second resistive element,
- a gate control signal supplied from said second control circuit is given to a gate of said second IGBT through a first resistive element,
- said gate control signal supplied from said second control circuit is given to said second MOSFET through a second resistive element,
- a resistance value of said second resistive element is higher than a resistance value of said first resistive element, and a diode is connected in inverse parallel with said second resistive element.
9 more elements
A power semiconductor device comprising, in a modularized manner:
- an inverter including first and second switching parts that operate in a complementary manner, said first and second switching parts being interposed in series with each other between a first power supply line that supplies a first voltage and a second power supply line that supplies a second voltage;
- and
- first and second control circuits for controlling switching operations of said first and second switching parts, respectively,
- wherein
- said first switching part includes a first IGBT and a first MOSFET, one main electrode of each of said first IGBT and said first MOSFET being connected to said first power supply line and the other main electrode of each of said first IGBT and said first MOSFET being connected to an output node of said inverter,
- said second switching part includes a second IGBT and a second MOSFET, one main electrode of each of said second IGBT and said second MOSFET being connected to said second power supply line and the other main electrode of each of said second IGBT and said second MOSFET being connected to said output node of said inverter,
- in a plane layout of said power semiconductor device:
- said first control circuit is arranged at a position opposed to said first switching part, and one of said first IGBT and said first MOSFET is arranged near said first control circuit while the other of said first IGBT and said first MOSFET is arranged at a position farther from said first control circuit;
- and
- said second control circuit is arranged at a position opposed to said second switching part, and one of said second IGBT and said second MOSFET is arranged near said second control circuit while the other of said second IGBT and said second MOSFET is arranged at a position farther from said second control circuit,
- each of said first IGBT and said first MOSFET is a transistor with a vertical structure in which a main current flows perpendicularly to a main surface of a semiconductor substrate,
- in a transistor within said first switching part which is arranged near said first control circuit, a gate pad connected to a gate of said transistor is provided at said first control circuit side within a plane of said other main electrode side, and a relay pattern is provided at a side opposite to said first control circuit within a plane of said other main electrode side,
- a first gate control signal supplied from said first control circuit is given to said gate pad while a second gate control signal supplied from said first control circuit is given to said relay pattern, and said second gate control signal is given through said relay pattern to a gate pad of a transistor arranged at the position farther from said first control circuit,
- each of said second IGBT and said second MOSFET is a transistor with a vertical structure in which a main current flows perpendicularly to a main surface of a semiconductor substrate,
- in a transistor within said second switching part which is arranged near said second control circuit, a gate pad connected to a gate of said transistor is provided at said second control circuit side within a plane of said other main electrode side, and a relay pattern is provided at a side opposite to said second control circuit within a plane of said other main electrode side,
- a first gate control signal supplied from said second control circuit is given to said gate pad while a second gate control signal supplied from said second control circuit is given to said relay pattern, and said second gate control signal is given through said relay pattern to a gate pad of a transistor arranged at the position farther from said second control circuit.
13 more elements
A power semiconductor device comprising, in a modularized manner:
- an inverter including first and second switching parts that operate in a complementary manner, said first and second switching parts being interposed in series with each other between a first power supply line that supplies a first voltage and a second power supply line that supplies a second voltage;
- and
- first and second control circuits for controlling switching operations of said first and second switching parts, respectively,
- wherein
- said first switching part includes a first IGBT and a first MOSFET, one main electrode of each of said first IGBT and said first MOSFET being connected to said first power supply line and the other main electrode of each of said first IGBT and said first MOSFET being connected to an output node of said inverter,
- said second switching part includes a second IGBT and a second MOSFET, one main electrode of each of said second IGBT and said second MOSFET being connected to said second power supply line and the other main electrode of each of said second IGBT and said second MOSFET being connected to said output node of said inverter,
- said first control circuit individually controls switching operations of said first IGBT and said first MOSFET such that said first IGBT is firstly turned on at a time of turning on and said first MOSFET is firstly turned off at a time of turning off,
- said second control circuit individually controls switching operations of said second IGBT and said second MOSFET such that said second IGBT is firstly turned on at a time of turning on and said second MOSFET is firstly turned off at a time of turning off.
5 more elements
Dependencies are inferred from the claim text.