Dummy through-silicon via capacitor
OwnerChangyok Parkinventor
Life of this patent
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Abstract
An integrated circuit device includes dummy through-silicon vias (TSVs) that can be connected to one or more voltage references, thereby increasing a capacitance associated with the integrated circuit device, such as a decoupling capacitance. In addition, the dummy TSVs can be distributed based on the distribution of active TSVs in the device, thus increasing the stability and performance of the TSV manufacturing process.
Claims20
A method, comprising:
- coupling a first plurality of dummy through-silicon vias (TSVs) of an integrated circuit device to a first voltage reference to set a capacitance associated with the integrated circuit device.
A method, comprising forming an integrated circuit device to have a plurality of active TSVs and a plurality of dummy TSVs, and coupling a first subset of the plurality of dummy TSVs to a first voltage reference to set a capacitance associated with the integrated circuit device.
An integrated circuit device comprising a plurality of active TSVs and a plurality of dummy TSVs, a first subset of the plurality of dummy TSVs coupled to a first voltage reference to set a capacitance associated with the integrated circuit device.
Dependencies are inferred from the claim text.