Electrostatic discharge protection circuit and method for radio frequency semiconductor device

An electrostatic discharge (ESD) protection circuit for a radio frequency (RF) semiconductor device, said electrostatic discharge protection circuit comprising:

• a first power supply voltage terminal configured to receive a first power supply voltage;
• a second power supply voltage terminal configured to receive a second power supply voltage;
• a power clamp coupled between the first and second power supply voltage terminals;
• an RF input pad configured to receive an RF input signal having an RF operating frequency for the RF semiconductor device;
• an intermediate node;
• a first ESD block coupled between the intermediate node and the first power supply voltage terminal, the first ESD block configured to direct an ESD pulse of a first polarity toward the first power supply voltage terminal;
• a second ESD block coupled between the intermediate node and the second power supply voltage terminal, the second ESD block configured to direct an ESD pulse of a second, opposite polarity toward the second power supply voltage terminal;
• and
• a resonance circuit coupled between the RF input pad and the intermediate node, the resonance circuit configured to present a greater impedance to the RF input signal having the RF operating frequency than to the ESD pulses.