Method for determining the active doping concentration of a doped semiconductor region

A non-transitory computer-readable medium having stored therein a computer program product comprising executable machine readable computer code which, when executed on a processor, performs a method of determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the method comprising:

• receiving photomodulated reflectance (PMOR) offset curve measurement data;
• receiving DC reflectance measurement data of the probe laser for a sample and a reference;
• and
• determining, based on the measurement, data values for the set of physical parameters of the doping profile.

A system for optically determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the system comprising:

• means for obtaining a sample comprising a fully activated doping profile and a reference;
• means for obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample comprising the fully activated doping profile and for the reference;
• and
• means for determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements, wherein the determining means further comprises means for determining from the photomodulated reflectance offset curve measurement data on the sample and from the DC reflectance measurement on the sample at least one of a junction depth Xj, an active doping concentration Nact and a profile abruptness or backside slope Sact.