Methods for small trench patterning using chemical amplified photoresist compositions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa Hui Chang, Chia-Chu Liu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa Hui Chang, Chia-Chu Liu
Estimating the term…
A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.
A method for forming a pattern on a substrate, the method comprising:
A method for forming a pattern on a substrate, comprising:
A method for forming a pattern on a substrate, comprising:
The method of claim 19, wherein the second exposure energy is sufficient to activate the PAG and PBG.
Dependencies are inferred from the claim text.