Semiconductor device including through electrode and method of manufacturing the same and stacked package including semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSang Jin BYEON
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Abstract
A semiconductor device including a wafer having an upper surface and a lower surface, circuit layers formed on the upper surface and the lower surface of the wafer, respectively, and a through electrode formed to penetrate the wafer is presented. The through electrode can be configured to electrically coupled the circuit layers formed on the upper surface and the lower surface of the wafer. The semiconductor device can be stacked to form a stacked package.
Claims24
A semiconductor device, comprising:
- a wafer having an upper surface and a lower surface;
- circuit layers formed on each of the upper surface and the lower surface of the wafer;
- and
- a through electrode formed to penetrate the wafer and configured to electrically couple the circuit layers formed on the upper surface and the lower surface of the wafer.
A stacked package, comprising:
- a plurality of stacked, electrically coupled semiconductor devices,
- each of the semiconductor devices including:
- circuit layers formed on an upper surface and a lower surface of a wafer;
- and
- a through electrode formed through the wafer and configured to electrically couple the circuit layers.
A method of manufacturing a semiconductor device, comprising:
- providing a wafer having a top surface and a bottom surface;
- forming an upper circuit layer on the upper surface of the wafer;
- processing the bottom surface of the wafer;
- forming a through electrode from and through the rear surface of the wafer to be connected to the upper circuit layer;
- and
- forming a lower circuit layer on the bottom surface of the wafer at both sides of the through electrode.
A method of manufacturing a stacked package, comprising:
- providing semiconductor devices, each of the semiconductor devices including circuit layers formed on an upper surface and a lower surface of a wafer and a through electrode penetrating the wafer;
- and
- mounting the semiconductor devices to be stacked.
A method of manufacturing a stackable semiconductor device, comprising:
- forming a through electrode through a wafer;
- forming circuit layers on an upper side of the wafer and on a bottom side of the wafer.
Dependencies are inferred from the claim text.