Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• first and second bit lines;
• a first storage node contact plug formed between the first and the second bit lines;
• and
• a second storage node contact plug formed at a lateral surface of and upper part of the first storage node contact plug and disposed over any of the first and the second bit lines,
• wherein the second storage node contact plug is formed as a spacer over the bit line hard mask.

A method for manufacturing a semiconductor device comprising:

• providing first and second bit lines;
• providing first and second insulating patterns over the first and the second bit lines, respectively;
• providing a first storage node contact plug between the first and the second bit lines;
• providing a first contact hole over the first storage node contact plug and between the first and the second insulating patterns;
• enlarging a size of the first contact hole to form a second contact hole so that a size of a top opening of the second contact hole is larger than a size of a bottom opening of the second contact hole;
• and
• providing a second storage node contact plug in the second contact hole so that the second storage node contact plug is coupled to the first storage node contact plug.