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US 2013/0154096 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeElpida Memory, Inc.
InventorKatsuhiko TANAKA
Life of this patent
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Abstract
In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.
Claims17
A manufacturing method of a semiconductor device, comprising:
- forming a via hole in an insulating layer that covers a conductive layer over a substrate;
- and
- forming a barrier layer in the via hole,
- wherein the barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film, and
- wherein the second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.
2 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a via hole in an insulating layer covering a conductive layer over a substrate;
- forming a titanium film at least on a bottom surface of the via hole and an upper surface of the insulating layer, wherein the titanium film is formed in a strong anisotropic sputtering chamber;
- forming a first titanium nitride film on the titanium film in the strong anisotropic sputtering chamber;
- forming a second titanium nitride film on the first titanium nitride film in a weak anisotropic sputtering chamber;
- and
- forming a tungsten layer on the second titanium nitride film.
3 more elements
A semiconductor device comprising:
- a conductive layer over a substrate;
- an insulating layer covering the conductive layer;
- a titanium film concealing at least a part of the conductive layer;
- a first titanium nitride film including first and second portions, the first portion concealing the titanium film over the part of the conductive layer, the second portion extending along a side surface of the insulating layer in a via hole, wherein the via hole is formed in the insulating layer exposing the part of the conductive layer;
- a second titanium nitride film covering the first titanium nitride film at an upper part of the via hole;
- and
- a conductive plug filling in the via hole through a barrier layer that includes the titanium film, the first titanium nitride film and the second titanium nitride film.
4 more elements
Dependencies are inferred from the claim text.