Semiconductor device, semiconductor device manufacturing method, and electronic device
AssigneeFujitsu Limited
InventorJunichi KON
Life of this patent
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Abstract
A semiconductor device includes an insulation layer, a first semiconductor element and a second semiconductor element which are disposed within the insulation layer, a frame which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, and a wiring layer which is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element.
Claims19
A semiconductor device, comprising:
- an insulation layer;
- a first semiconductor element and a second semiconductor element which are disposed within the insulation layer;
- a frame that has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer;
- and
- a wiring layer that is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element.
A semiconductor device manufacturing method, comprising:
- forming a substrate including
- an insulation layer,
- a first semiconductor element and a second semiconductor element which are disposed within a first area of the insulation layer, and
- a first frame which is disposed within the insulation layer, has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer of the first area;
- forming a wiring layer including a first electrode which is electrically connected to the first semiconductor element and the second semiconductor element over the substrate;
- and
- cutting the wiring layer and the substrate so that the insulation layer of the first area is surrounded with at least a portion of the first frame.
A substrate, comprising:
- an insulation layer;
- a first semiconductor element and a second semiconductor element which are disposed within a first area of the insulation layer;
- a first frame which is disposed within the insulation layer, has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer of the first area;
- a third semiconductor element and a fourth semiconductor element which are disposed within a second area of the insulation layer;
- and
- a second frame which is disposed within the insulation layer, has higher thermal conductivity than the insulation layer and surrounds the third semiconductor element and the fourth semiconductor element via the insulation layer of the second area.
Dependencies are inferred from the claim text.