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US 2013/0154059 A1Published application
Semiconductor device manufacturing method and semiconductor device
AssigneesNational University Corporation Tohoku University, Tokyo Electron Limited
InventorsTadahiro Ohmi, Tetsuya Goto, Akinobu Teramoto, Takaaki Matsuoka
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Abstract
A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.
Claims6
A semiconductor device manufacturing method comprising:
- exciting plasma;
- applying RF power onto a target substrate to generate substrate bias;
- and
- performing an ion implantation plural times by applying the RF power in the form of pulses.
1 more element
Dependencies are inferred from the claim text.