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US 2013/0154053 A1Published application
Inductors with through vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung Yen, Yu-Ling Lin
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Abstract
A device using an inductor with one or more through vias, and a method of manufacture is provided. In an embodiment, an inductor is formed in one or more of the metallization layers. One or more through vias are positioned directly below the inductor. The through vias may extend through one or more dielectric layers interposed between a substrate and the inductors. Additionally, the through vias may extend completely or partially through the substrate.
Claims20
An apparatus comprising:
- a substrate;
- one or more dielectric layers overlying the substrate;
- one or more dummy vias extending through one or more of the one or more dielectric layers;
- and
- an inductor overlying the one or more vias.
2 more elements
An apparatus comprising:
- a substrate having a plurality of overlying dielectric layers;
- at least one through via extending into the substrate;
- and
- an inductor formed in one or more of the dielectric layers, at least a portion of the inductor directly overlying the at least one through via.
1 more element
A method of forming an electrical device:
- providing a substrate;
- forming one or more first dielectric layers over the substrate;
- forming one or more through vias through at least one of the one or more first dielectric layers;
- forming one or more second dielectric layers over the through vias;
- and
- forming an inductor in one or more of the one or more second dielectric layers, the inductor directly overlying at least some of the through vias.
3 more elements
Dependencies are inferred from the claim text.