Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology

An integrated circuit (IC) coupled to a wafer, comprising:

• a) a wafer comprising a ceramic material;
• b) an intermediate layer formed on a surface of the wafer comprising the ceramic material;
• and,
• c) an active layer comprising the IC, wherein the active layer comprising the IC is coupled to the intermediate layer by direct bonding.

A method for forming an integrated circuit (IC) coupled to a wafer, comprising:

• a) polishing a surface of a ceramic wafer;
• b) forming an active layer comprising the IC on a silicon substrate;
• c) forming a planarization layer on the active layer comprising the IC;
• d) coupling a transfer wafer to the planarization layer;
• e) removing the silicon substrate from the active layer comprising the IC;
• and,
• f) coupling the active layer comprising the IC to the surface of the ceramic wafer.

A method for forming an integrated circuit (IC) coupled to a wafer, comprising:

• a) forming an intermediate layer on a surface of a ceramic wafer;
• b) polishing a surface of the intermediate layer;
• c) forming an active layer comprising the IC on a silicon substrate;
• d) forming a planarization layer on the active layer comprising the IC;
• e) coupling a transfer wafer to the planarization layer;
• f) removing the silicon substrate from the active layer comprising the IC;
• and,
• g) coupling the active layer comprising the IC to the surface of the intermediate layer.