US 2013/0154046 A1Published application

Image sensor

AssigneeDongbu HiTek Co., Ltd.

InventorSo Eun PARK

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Abstract

An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line.

Claims13

Dependent claims

An image sensor comprising:

a plurality of unit pixels, wherein each unit pixel comprises a photo diode for sensing external light to generate photo charges;
a transfer transistor connected to the photo diode, wherein the transfer transistor is configured to store the photo charges generated in the photo diode into a floating diffusion region when being turned-on;
an amplification transistor, wherein the amplification transistor is configured to amplify the photo charges stored into the floating diffusion region;
a select transistor connected to the amplification transistor, wherein the select transistor is configured to perform a switching operation;
and
an output line extending in a column direction, wherein the output line is configured to output the photo charges in accordance with the switching operation of the select transistor,
wherein the photo diode is arranged to share the output line with an adjacent photo diode in a horizontal a direction, so that the photo charges generated in the photo diode and the adjacent photo diode are outputted through the output line.

4 more elements

An image sensor comprising:

a plurality of eight photo diodes configured to generate photo charges, wherein each of said plurality of eight photo diodes has a transfer transistor, wherein said plurality of eight photo diodes comprises a plurality of photo diode pairs, wherein each of said photo diode pairs has a select transistor shared by each of said photo diode pairs;
a first select signal line configured to apply a first select signal to a first select transistor which is commonly used by a first photo diode pair of said photo diode pairs, wherein said first photo diode pair comprises vertically adjacent fourth photo diode and eighth photo diode;
a first output line configured to output photo charges of a second photo diode pair of said photo diode pairs when the first select signal is applied through the first select signal line, wherein said second photo diode pair comprises vertically adjacent first photo diode and sixth photo diode;
a second select signal line configured to apply a second select signal to a second select transistor which is commonly used by a third photo diode pair of said photo diode pairs, wherein said third photo diode pair comprises vertically adjacent first photo diode and fifth photo diode, wherein photo charges of the first photo diode and fifth photo diode are output through the first output line;
a second output line configured to output photo charges of a fourth photo diode pair of said photo diode pairs and said first photo diode pair, wherein said fourth photo diode pair comprises vertically adjacent third photo diode and seventh photo diode, wherein the fourth photo diode pair is configured to commonly use a third select transistor to which the second select signal is provided from the second select signal line, and wherein the first photo diode pair is configured to commonly use a fourth select transistor to which the first select signal is provided from the first select signal line;
a first transfer signal line connected to the transfer transistors of the first photo diode, the second photo diode, the third photo diode, and the fourth photo diode are arranged in a horizontal direction;
and
a second transfer signal line connected to the transfer transistors of the fifth photo diode, the sixth photo diode, the seventh photo diode, and the eighth photo diode arranged in a horizontal direction.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/589,858Filed 20 Aug 2012
Priority: KR 10-2011-013753619 Dec 2011
Published: 20 Jun 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification3 codes

H10F 39/813
Constructional details of image sensors: electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
H10F
Solar cells and light sensors

Family

US 8,513,760 B2Related patent
US 2013/0154046 A1This patent

From the US filing history. Foreign family members aren’t listed.

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