Photo detectors
AssigneeElectronics and Telecommunications Research Institute
InventorsChul Huh, Sang Hyeob Kim, Byoung-Jun Park, Eun Hye Jang
Life of this patent
Estimating the term…
Abstract
Photo detectors are provided. The photo detector includes a photoelectric conversion layer between a lower carrier transportation layer and an upper carrier transportation layer, and a common electrode on the upper carrier transportation layer opposite to the photoelectric conversion layer. The photoelectric conversion layer includes a plurality of light absorption layers and each of the light absorption layers contains silicon nanocrystals. The silicon nanocrystals in respective ones of the light absorption layers have different sizes from each other.
Claims14
A photo detector comprising:
- a photoelectric conversion layer between a lower carrier transportation layer and an upper carrier transportation layer;
- and
- a common electrode on the upper carrier transportation layer opposite to the photoelectric conversion layer,
- wherein the photoelectric conversion layer includes a plurality of light absorption layers and each of the light absorption layers contains silicon nanocrystals;
- and
- wherein the silicon nanocrystals in respective ones of the light absorption layers have different sizes from each other.
A photo detector comprising:
- a first light absorption layer, a second light absorption layer and a third light absorption layer sequentially stacked on a lower carrier transportation layer;
- and
- an upper carrier transportation layer on the third light absorption layer,
- wherein the first light absorption layer includes first nanocrystals having a first size, the second light absorption layer includes second nanocrystals having a second size greater than the first size, and the third light absorption layer includes third nanocrystals having a third size greater than the second size.
Dependencies are inferred from the claim text.