Method and system for providing a magnetic tunneling junction using thermally assisted switching

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the magnetic memory cells including at least one magnetic junction, the at least one magnetic junction including a first pinned layer, a first tunneling barrier layer, a free layer, a second tunneling barrier layer, and a second pinned layer, the free layer configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction, the free layer including a first plurality of ferromagnetic layers interleaved with a second plurality of ferromagnetic layers, the first plurality of layers having at least a first Curie temperature of at least one hundred fifty and not more than five hundred degrees centigrade, the second plurality of layers having at least a second Curie temperature of at least six hundred and not more than one thousand two hundred degrees centigrade, the free layer being configured to be switchable using a write current passed through the magnetic junction, the first tunneling barrier layer being between the first pinned layer and the free layer, the second tunneling barrier layer residing between the second pinned layer and the free layer;
• and
• a plurality of bit lines coupled with the plurality of magnetic memory cells.

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the magnetic memory cells including at least one magnetic junction, the at least one magnetic junction including a first pinned layer, a first tunneling barrier layer, a free layer, a second tunneling barrier layer, and a second pinned layer, the free layer configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction, the free layer including a first magnetic layer, a second magnetic layer, and a ferrimagnet between the first and second magnetic layers, the ferrimagnet having a saturation magnetization that increases with increasing temperature, the ferrimagnet including a first sublattice and a second sublattice, the first sublattice having a first Curie temperature, the second sublattice having a second Curie temperature greater than the first Curie temperature, the free layer being configured to be switchable using a write current passed through the magnetic junction, the second tunneling barrier layer residing between the second pinned layer and the free layer;
• and
• a plurality of bit lines coupled with the plurality of magnetic memory cells.

A method for providing a magnetic junction comprising:

• providing a pinned layer;
• providing a nonmagnetic spacer layer;
• providing a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the free layer being configured to be switchable using a write current passed through the magnetic junction, the free layer being configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction.