Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions

A semiconductor device, comprising a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region, the field electrode structure comprising:

• a field electrode;
• a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening;
• at least one of a field stop region and a generation region, the field stop region of the first doping type and more highly doped than the drift region, the field stop region connecting the field electrode to the drift region through the opening of the field electrode dielectric, the generation region connecting the field electrode to the drift region through the opening of the field electrode dielectric or arranged in the field electrode;
• and
• a compensation region of a second doping type adjoining the drift region and connected to device region.