Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions

A semiconductor device, comprising:

• a transistor comprising drain and source regions and a gate electrode structure;
• a contact bar formed in a first dielectric material and connecting to one of said drain region and said source region, said contact bar comprising a first conductive material, a length of said contact bar extending along a width direction of said transistor;
• and
• a conductive line formed in a second dielectric material, said conductive line comprising an upper portion having a top width extending along a length direction of said transistor and a lower portion having a bottom width extending along said length direction that is less than said top width of said upper portion, said conductive line connecting to said contact bar and comprising a second conductive material that differs from said first conductive material.

A semiconductor device, comprising:

• a transistor comprising drain and source regions and a gate electrode structure;
• a contact bar comprising a first conductive material formed in a first dielectric material and connecting to one of said drain region and said source region, a length of said contact bar extending along a width direction of said transistor;
• a conductive line formed in a second dielectric material and connecting to said contact bar, said conductive line having a top width extending along a length direction of said transistor and comprising a second conductive material that differs from said first conductive material;
• a landing area embedded in said conductive line and said second dielectric material, said landing area comprising said second conductive material and having a top width extending along said length direction that is greater than said top width of said conductive line;
• and
• a via formed in a metallization layer and connecting to said landing area.

A semiconductor device, comprising:

• a transistor comprising drain and source regions;
• a contact bar comprising a first conductive material formed in a first dielectric material and connecting to one of said drain region and said source region, said contact bar having a length extending along a width direction of said transistor and a top width extending along a length direction of said transistor;
• a conductive line formed in a second dielectric material and connecting to said contact bar, said conductive line comprising a first portion having a top width extending along said length direction and a second portion having a bottom width extending along said length direction that is less than said top width of said contact bar and less than said top width of said first portion, said conductive line comprising a second conductive material that differs from said first conductive material;
• and
• a via formed in a metallization layer and connecting to said first portion, said via having a bottom width extending along said length direction that is less than said top width of said first portion.