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US 2013/0154017 A1Published application
Self-Aligned Gate Structure for Field Effect Transistor
AssigneeMicrochip Technology Incorporated
InventorsGregory Dix, Harold Kline, Rodney Schroeder, Daniel J. Grimm
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Abstract
A field effect transistor has a substrate with an epitaxial layer, base regions extending from a top of the epitaxial layer into the epitaxial layer, an insulation region having side walls and extending between two base regions on top of the substrate; and a polysilicon gate structure covering the insulation region including the side walls, wherein effective gates are formed by a portion of the polysilicon covering side walls above the base region.
Claims20
A method for manufacturing a field effect transistor comprising:
- providing a stack comprising a substrate and epitaxial layer deposited on said substrate, a multilayer insulating layer on top of the epitaxial layer, and a first gate-layer on top of the insulating layer;
- patterning the stack to provide openings up to a lowest layer of the multi-layer insulating layer;
- implanting base regions;
- depositing a second gate layer covering the openings and the first gate layer;
- performing an etching up to the lowest layer of the multi-layer insulating layer such that spacers on sides of the openings remain and form respective gate structures of the field effect transistor.
2 more elements
A field effect transistor comprising:
- a substrate comprising an epitaxial layer;
- Base regions extending from a top of the epitaxial layer into the epitaxial layer;
- an insulation region having side walls and extending between two base regions on top of the substrate;
- a polysilicon gate structure covering said insulation region including said side walls, wherein effective gates are formed by a portion of the polysilicon covering side walls above said base region.
1 more element
Dependencies are inferred from the claim text.