Integrated Circuit Device, System, and Method of Fabrication

A semiconductor device comprising:

• a semiconductor portion, defining a top surface and a bottom surface, having a cross-sectional shape in a plane parallel with said top and bottom surfaces which is wider at opposite ends thereof and which tapers to a narrower portion between said ends, said narrower portion extending from said top surface to said bottom surface.
• a first gate portion connected to said semiconductor portion on one side of at said narrower portion, extending from said top surface to said bottom surface;
• a second gate portion connected to said semiconductor portion at the opposite sides of said narrower portion, extending from said top surface to said bottom surface;
• and
• at least three metal terminals selected from a group consisting of:
• a first terminal connected to one wider end of said semiconductor portion;
• a second terminal connected to the other wider end of said semiconductor portion;
• a third terminal connected to the first gate portion;
• and
• a fourth terminal connected to the second gate portion;
• wherein said top surface and said bottom surface define a height therebetween, and further wherein said at least three metal terminals extend along said height of said device such as to be accessible from said top surface and said bottom surface.