Isolated epitaxial modulation device

An integrated circuit comprising:

• a substrate;
• processing circuitry formed on the substrate;
• a barrier structure formed on the substrate;
• an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure;
• a semiconductor device, the semiconductor device located in the isolated epitaxial region;
• a modulation network formed on the substrate and electrically coupled to the semiconductor device;
• and
• a signal pad electrically coupled to the isolated epitaxial region;
• wherein the semiconductor device and the epitaxial modulation network are configured to protect the processing circuitry from current spikes.

A system comprising:

• processing circuitry;
• a power converter coupled to a power source and configured to convert power from the power source to a power level or a polarity usable by the processing circuitry;
• and
• one or more isolated epitaxial modulation devices configured to modulate an input voltage, each of the one or more isolated epitaxial modulation devices coupled to a respective one of the processing circuitry and the power converter;
• wherein each of the one or more isolated epitaxial modulation devices comprises:
• a substrate;
• a barrier structure formed on the substrate;
• an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure;
• a semiconductor device, the semiconductor device located in the isolated epitaxial region;
• a modulation network formed on the substrate and electrically coupled to the semiconductor device;
• and
• a bond pad coupled to the isolated epitaxial region;
• wherein the semiconductor device and the epitaxial modulation network are configured to modulate the input voltage.