Trench type power transistor device with super junction and manufacturing method thereof

A manufacturing method of a trench type power transistor device with a super junction, comprising:

• providing a substrate of first conductivity type;
• forming a first epitaxial layer of a second conductivity type different from said first conductivity type on said substrate;
• forming at least one first through hole extending through said first epitaxial layer in said first epitaxial layer;
• forming two doped drain regions of said first conductivity type respectively in said first epitaxial layer at both sides of said first through hole, wherein said doped drain regions extend from the upper surface of said first epitaxial layer to be in contact with said substrate;
• filling up said first through hole with an insulating layer;
• forming a second epitaxial layer of said second conductivity type on said first epitaxial layer and said insulating layer;
• forming at least one second through hole in said second epitaxial layer to expose said insulating layer;
• forming a gate structure in said second through hole;
• and
• forming two doped source regions of said first conductivity type in said second epitaxial layer at both sides of said second through hole.

A trench type power transistor device with a super junction, comprising:

• a substrate of a first conductivity type;
• a first epitaxial layer of a second conductivity type different from said first conductivity type, wherein said first epitaxial layer is disposed on said substrate and has at least one through hole;
• at least two doped drain regions of said first conductivity type which are disposed in said first epitaxial layer at both sides of said through hole and contact said substrate;
• an insulating layer disposed in said through hole and having an upper surface lower than the upper surface of said first epitaxial layer;
• at least two doped channel regions of said second conductivity type region which are disposed respectively in said first epitaxial layer on said doped drain regions and respectively contact said doped drain regions;
• a gate structure disposed in said through hole on said insulating layer;
• and
• at least two doped source regions of said first conductivity type disposed in said first epitaxial layer respectively at said sides of said through hole and respectively being in contact with said doped channel regions.

A trench type power transistor device with a super junction, comprising:

• a substrate of a first conductivity type;
• a first epitaxial layer of a second conductivity type different from said first conductivity type, wherein said first epitaxial layer is disposed on said substrate and has at least one first through hole;
• at least two doped drain regions of said first conductivity type which are disposed in said first epitaxial layer at both sides of said first through hole and extend from the upper surface of said first epitaxial layer to be in contact with said substrate;
• an insulating layer filling up said first through hole;
• a second epitaxial layer of said second conductivity type which is disposed on said first epitaxial layer and contacts said doped drain regions, wherein said second epitaxial layer has at least one second through hole disposed on said insulating layer;
• a gate structure disposed in said second through hole on said insulating layer;
• and
• at least two doped source regions of said first conductivity type disposed respectively in said second epitaxial layer at both sides of said second through hole.