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US 2013/0153981 A1Published application
Nonvolatile memory devices and methods of manufacturing the same
OwnerKyoung Rok HANinventor
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Abstract
A nonvolatile memory device, and method of forming the same, discloses a semiconductor device including floating gates that each have a first region that overlaps with a corresponding junction and that each have a second region that does not overlap the corresponding junction. The first region and the second region have different work functions.
Claims21
A nonvolatile memory device, comprising:
- gate patterns, each comprising a tunnel insulating layer, a floating gate, a charge blocking layer, and a control gate, formed over a substrate;
- and
- junctions formed in the substrate, where each of the junctions is to overlap with at least one of the floating gates, and
- where each of the floating gates includes a first region that overlaps a corresponding junction, and a second region, that does not overlap the corresponding junction, and where the first region and the second region have different work functions.
1 more element
A method of manufacturing a nonvolatile memory device, the method comprising:
- forming, over a substrate, gate patterns, each comprising a tunnel insulating layer, a floating gate, a charge blocking layer, and a control gate;
- and
- performing a surface treatment process on each of the floating gates, the surface treatment resulting in a first region of each of the floating gate and a second region of each of the floating gate having different work functions.
A method of manufacturing a nonvolatile memory device, the method comprising:
- forming a tunnel insulating layer on a substrate;
- forming a first conductive layer for floating gates on the tunnel insulating layer, where the first conductive layer comprises two or more layers each having a different work function;
- forming a charge blocking layer on the first conductive layer;
- forming a second conductive layer for control gates on the charge blocking layer;
- and
- forming gate patterns by etching the second conductive layer, the charge blocking layer, and the first conductive layer.
3 more elements
Dependencies are inferred from the claim text.