Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus and electronic device

A method of manufacturing a solid-state imaging apparatus which includes a plurality of photoelectric conversion units, an element isolation unit that performs element isolation between the plurality of photoelectric conversion units, a diffusion prevention unit that prevents diffusion of a dark current component generated on an interfacial surface of the element isolation unit to a region surrounding the dark current component generation region, a first conductive type first region that is formed deeper than the bottom surface of the element isolation unit, covers the side wall of the element isolation unit on the photoelectric conversion unit side, and has impurity concentration higher than a first conductive type well region of the surrounding of the photoelectric conversion units, and a first conductive type second region that is formed along the bottom surface of the element isolation unit with impurity concentration lower than the impurity concentration of the well region, the method comprising:

• implanting a first conductive type impurity that covers the side wall region of the element isolation unit into the region between the photoelectric conversion units and the element isolation unit, before formation of the element isolation unit or after the formation of the element isolation unit, and
• implanting a second conductive type impurity into an opening region of a mask which forms the element isolation unit, with a dose amount having an extent to not reverse the conductive type of the well region, and with an energy to set an injection range Rp to have the same depth with the element isolation unit.

A method of manufacturing a solid-state imaging apparatus which includes a plurality of photoelectric conversion units, an element isolation unit that performs element isolation between the plurality of photoelectric conversion units, a diffusion prevention unit that prevents diffusion of a dark current component generated on an interfacial surface of the element isolation unit to a region surrounding the dark current component generation region, a first conductive type first region that is formed deeper than the bottom surface of the element isolation unit, covers the side wall of the element isolation unit on the photoelectric conversion unit side, and has impurity concentration higher than a first conductive type well region of the surrounding of the photoelectric conversion units, and a first conductive type second region that is formed along the bottom surface of the element isolation unit with impurity concentration lower than the impurity concentration of the well region, the method comprising:

• implanting a second conductive type impurity into a formation region of the element isolation unit so as to be distributed in the vicinity of the depth of the element isolation unit before formation of the element isolation unit, and
• implanting a first conductive type impurity that covers the side wall region of the element isolation unit into the region between the photoelectric conversion units and the element isolation unit.

A method of manufacturing a solid-state imaging apparatus which includes a plurality of photoelectric conversion units, an element isolation unit that performs element isolation between the plurality of photoelectric conversion units, a diffusion prevention unit that prevents diffusion of dark current component generated on an interfacial surface of the element isolation unit to a region surrounding the dark current component generation region, a first conductive type first region that is formed deeper than the bottom surface of the element isolation unit, covers the side wall of the element isolation unit on the photoelectric conversion unit side, and has impurity concentration higher than a first conductive type well region of the surrounding of the photoelectric conversion units, and a first conductive type third region that is formed along the bottom surface of the element isolation unit by separating by only a predetermined interval from the bottom surface in a depth direction with impurity concentration higher than the impurity concentration of the well region, the method comprising:

• implanting a first conductive type impurity that covers the side wall region of the element isolation unit into the region between the photoelectric conversion units and the element isolation unit, before formation of the element isolation unit or after the formation of the element isolation unit, and
• implanting the first conductive type impurity into an opening region of a mask which forms the element isolation unit, with an energy to set an injection range Rp to have a depth deeper than the element isolation unit.