V-Groove Source/Drain Mosfet and Process For Fabricating Same
AssigneeInternational Business Machines Corporation
InventorsMICHAEL A. GUILLORN, GEN PEI LAUER, ISAAC LAUER, JEFFREY W. SLEIGHT
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Abstract
A structure includes a substrate containing at least first and second adjacent gate structures on a silicon surface of the substrate and a silicided source/drain region formed in a V-shaped groove between the first and second adjacent gate structures. The silicided source/drain region formed in the V-shaped groove extend substantially from an edge of the first gate structure to an opposing edge of the second gate structure.
Claims16
A structure, comprising:
- a substrate containing at least first and second adjacent gate structures on a silicon surface of the substrate;
- and
- a silicided source/drain region formed in a V-shaped groove between the first and second adjacent gate structures, where the silicided source/drain region formed in the V-shaped groove extends substantially from an edge of the first gate structure to an opposing edge of the second gate structure.
The structure of claim 12, where the source/drain region interfaces to an extension region that extends in the SOT layer from beneath an edge of a gate conductor to a top edge of the V-shaped groove.
A structure, comprising:
- a substrate containing at least first and second adjacent gate structures disposed on a silicon surface of the substrate, the substrate comprising a silicon on insulator (SOT) layer disposed upon an insulating layer;
- a V-shaped groove disposed through the silicon surface between the first and second adjacent gate structures, where the V-shaped groove extends substantially from an edge of the first gate structure to an opposing edge of the second gate structure and stops on a Si(111) plane of the SOI layer;
- and
- a source region and a drain region disposed in the V-shaped groove that extend at least from a bottom of the V-shaped groove to the insulating layer.
Dependencies are inferred from the claim text.