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US 2013/0153970 A1Published application
Transistor structure, method for manufacturing a transistor structure, force-measuring system
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorsIgnaz Eisele, Martin Heigl, Karl Haberger
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Abstract
A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.
Claims24
A transistor structure comprising:
- a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate;
- and
- a control electrode associated with the channel region, wherein the control electrode comprises a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region, so as to change a distance between the control electrode portion and the channel region based on the action of the force.
A method for manufacturing a transistor structure, comprising:
- producing a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate;
- applying an intermediate layer comprising a semiconductor connection material onto the channel region in a patterned manner having a thickness such that a lattice structure of the semiconductor substrate is continued through the intermediate layer;
- applying a control electrode associated with the channel region onto the intermediate layer such that the lattice structure of the semiconductor substrate is continued into the control electrode;
- and
- selectively removing the intermediate layer such that a control electrode portion elastically deflectable under the action of a force is formed, wherein a distance between the control electrode portion and the channel region is changeable based on the action of the force.
2 more elements
A force-measuring system comprising:
- a transistor structure comprising:
- a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate;
- and a control electrode associated with the channel region, wherein the control electrode comprises a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region, so as to change a distance between the control electrode portion and the channel region based on the action of the force;
- and
- an evaluator connected to the first terminal region, the second terminal region and the control electrode portion of the transistor structure,
- wherein the evaluator is configured to establish a measuring signal between the first terminal region and the second terminal region, the measuring signal being dependent on a distance between the control electrode portion and the channel region and, consequently, on the action of the force on the control electrode portion.
3 more elements
A transistor structure comprising:
- a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate;
- and
- a control electrode associated with the channel region, wherein the control electrode comprises a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region, so as to change a distance between the control electrode portion and the channel region based on the action of the force,
- wherein the control electrode and/or the control electrode portion comprises a monocrystalline lattice structure.
1 more element
A transistor structure comprising:
- a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate;
- and
- a control electrode associated with the channel region, wherein the control electrode comprises a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region, so as to change a distance between the control electrode portion and the channel region based on the action of the force,
- wherein the control electrode additionally comprises one or several control electrode bases by means of which the control electrode portion is supported on one side or on several sides as a bending bar structure relative to the semiconductor substrate,
- wherein the control electrode comprises a control electrode lid and a control electrode intermediate region, and
- wherein the control electrode lid and the substrate comprise a silicon material and the control electrode intermediate region comprises a silicon-germanium material.
3 more elements
Dependencies are inferred from the claim text.