US 2013/0153969 A1 · STRUCTURE FOR MOSFET SENSOR

Abstract

A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

Claims20

Dependent claims

A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor, the structure comprising:

a MOSFET having a first surface;
a sensing membrane formed on the first surface;
and
a reference electrode formed on the first surface, wherein the reference electrode and the sensing membrane are so arranged that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/419,156Filed 13 Mar 2012

Priority

TW TW 10014693916 Dec 2011

Published

20 Jun 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification2 codes

G01N 27/4145
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS: specially adapted for biomolecules, e.g. gate electrode with…
G01N
Investigating or analysing materials by determining their chemical or physical properties

Structure for mosfet sensor

Life of this patent

Structure for mosfet sensor

Life of this patent

Abstract

Claims20