Back to results
US 2013/0153968 A1Published application
Semiconductor Device
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., NXP B. V.
InventorsMarkus Mueller, Anco Heringa
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
Claims15
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a first contact, and
- a second contact,
- wherein the average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
1 more element
A method of making a semiconductor device, the method comprising:
- forming an GaN layer on a substrate;
- forming an AlGaN layer on the GaN layer;
- forming a first contact and a second contact of the device;
- and varying the average thickness of the AlGaN layer between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
1 more element
Dependencies are inferred from the claim text.