Strained transistor integration for cmos

An apparatus comprising:

• a selectively grown layer of a silicon material suitable as a channel for a circuit device on a area of a Si1-XGeX material defining a interface surface of a substrate of graded relaxed silicon germanium material;
• wherein the layer of silicon material is under a tensile strain caused by a lattice spacing of the silicon material being smaller than a lattice spacing of the Si1-XGeX material at the interface, wherein X is between 0.1 and 0.3;
• a gate dielectric layer in contact with the selectively grown silicon material;
• and
• a gate electrode on the gate dielectric layer.

An apparatus comprising:

• a selectively grown layer of a Si1-YGeY material suitable as a channel for a circuit device on a area of a Si1-XGeX material defining a interface surface of a substrate of graded relaxed silicon germanium material;
• wherein the layer of Si1-YGeY material is under a compressive strain caused by a lattice spacing of the Si1-YGeY material being larger than a lattice spacing of the Si1-XGeX material at the interface, wherein X<Y, and Y is between 0.2 and 0.6;
• a gate dielectric layer in contact with the selectively grown Si1-YGeY material;
• and
• a gate electrode on the gate dielectric layer.

An apparatus comprising:

• a selectively grown layer of a silicon material suitable as a first channel for a first circuit device on a first area of a Si1-XGeX material defining a first interface surface of a substrate of graded relaxed silicon germanium material;
• wherein the layer of silicon material is under a tensile strain caused by a lattice spacing of the silicon material being smaller than a lattice spacing of the Si1-XGeX material at the first interface, wherein X is between 0.1 and 0.3;
• and
• wherein the graded relaxed silicon germanium material has one of a thickness of between 1 micrometer and 3 micrometers in thickness, a grading concentration of germanium that increases from 0 percent to between 10 percent and 30 percent at the first and second interfaces, and a grading concentration rate that increases at between 5 percent Ge and 15 percent Ge per micrometer in depth.