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US 2013/0153962 A1Published application
Avalanche photo diode and method of manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsJae-Sik SIM, Kisoo Kim, Bongki Mheen, MyoungSook Oh, Yong-Hwan Kwon, Eun Soo Nam
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Abstract
The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.
Claims20
An avalanche photo diode comprising:
- a substrate;
- a light absorption layer formed on the substrate;
- a clad layer formed on the light absorption layer;
- an active region formed in the clad layer;
- a guard ring region formed around the active region;
- and
- an insulating region formed between the guard ring region and the active region.
4 more elements
A method of manufacturing an avalanche photo diode, comprising:
- forming a light absorption layer and a clad layer on a substrate;
- forming an active region and a guard ring region in the clad layer;
- and
- forming an insulating region in the clad layer between the active region and the guard ring region.
1 more element
Dependencies are inferred from the claim text.