Optically triggered semiconductor device and method for making the same

A method comprising:

• providing a semiconductor body extending between opposite first and second sides, the semiconductor body including doped layers that form first and second dopant junctions located between the first and second sides;
• removing a first portion of a first layer of the doped layers that is disposed along the first side of the semiconductor body to expose a second layer of the doped layers, the first portion of the first layer removed to provide an activation portion of the semiconductor body that receives incident radiation to generate electric current in an optical thyristor of the semiconductor body;
• removing a second portion of the first layer of the doped layers to expose the second layer in an intermediate portion of the semiconductor body, the intermediate portion disposed between an amplifying thyristor and a switching thyristor of the semiconductor body;
• conductively coupling a conductive terminal between the first layer in the amplifying thyristor of the semiconductor body and the second layer that is exposed in the intermediate portion;
• and
• conductively coupling an anode to the first layer of the doped layers and a cathode to the doped layers at the second side of the semiconductor body.

A device comprising:

• an optical thyristor configured to generate an electric current when exposed to radiation;
• an amplifying thyristor having a first gate and configured to switch to the conducting state when the first gate receives at least a first threshold current;
• and
• a switching thyristor having a second gate and coupled with an anode and a cathode, the switching thyristor configured to switch to the conducting state when the second gate receives at least a second threshold current,
• wherein the optical thyristor is configured to generate the electric current for the second gate that exceeds the first threshold current of the amplifying thyristor and the amplifying thyristor is configured to increase the electric current such that the electric current exceeds the second threshold current of the switching thyristor and is provided to the second gate.