Group iii nitride semiconductor light-emitting device

A Group III nitride semiconductor light-emitting device, comprising a conductive support, a p-electrode disposed on the support, a semiconductor layer disposed on the p-electrode, the semiconductor layer being composed of at least a p-layer, a light-emitting layer, and an n-layer disposed in this order from the p-electrode, each of the three layers formed of a Group III nitride semiconductor, and an n-electrode disposed on the n-layer, wherein

• the device has a device isolation trench which is formed along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape;
• and
• an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench;
• and
• the n-electrode has
• a pad portion to which a bonding wire is to be connected;
• a contact portion which is disposed at a distance from the pad portion and which is partially or fully disposed on the n-layer;
• and
• an outer peripheral wire trace portion which extends so as to contour the periphery, to thereby connect the pad portion with the contact portion and which is fully disposed on the insulation film, or which is partially disposed on the insulation film, the remaining part thereof being disposed on the n-layer.