US 2013/0153931 A1 · N-DOPED SINGLE CRYSTAL DIAMOND SUBSTRATES AND METHODS THEREFOR

Abstract

The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

Claims35

Dependent claims

A method for forming an n-doped single crystal diamond (SCD) structure, the method comprising:

(a) providing a SCD layer having a growth surface;
(b) preferentially anisotropically etching a recess in the SCD layer through the growth surface, the recess (A) being defined by one or more (111) surface sidewalls etched into the SCD layer through the growth surface and (B) having a base defined by the intersection of the sidewalls and the growth surface of the SCD layer;
and
(c) depositing n-doped SCD into the recess, thereby forming an n-doped SCD region in the recess and the resulting n-doped SCD structure.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/819,948Filed 31 Aug 2011

Priority

2 Sep 2010

Published

20 Jun 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 62/117
Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies: shapes of semiconductor bodies
H10P 14/24
Of semiconductor materials: using chemical vapour deposition [CVD]
H10P 14/2903
Being Group IVA materials: carbon, e.g. diamond-like carbon
H10P 14/2925
Structures: surface structures

N-doped single crystal diamond substrates and methods therefor

Life of this patent

N-doped single crystal diamond substrates and methods therefor

Life of this patent

Abstract

Claims35