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AssigneeCree, Inc.
InventorsRobert Tyler Leonard, Hudson M. Hobgood, William A. Thore
Estimating the term…
A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
A silicon carbide crystal having a substantially uniform concentration of a low-solubility impurity, the silicon carbide crystal formed by a process comprising:
A semi-insulating, silicon carbide crystal having a dimension of at least 50 mm of a polytype selected from a group consisting of 6H, 4H, 15R and 3C, the semi-insulating, silicon carbide crystal comprising:
A semi-insulating, silicon carbide crystal having a dimension of at least 50 mm of a polytype selected from a group consisting of 6H, 4H, 15R and 3C, the semi-insulating, silicon carbide crystal comprising:
A semi-insulating, silicon carbide wafer having a dimension of at least 50 mm and a thickness of at least 50 μm of a polytype selected from a group consisting of 6H, 4H, 15R and 3C, the semi-insulating, silicon carbide crystal comprising:
A semi-insulating, silicon carbide, substantially micropipe free die having a dimension of at least 10 mm×10 mm×1 mm comprising:
Dependencies are inferred from the claim text.