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US 2013/0153927 A1Published application
Semiconductor devices having stressor regions and related fabrication methods
AssigneeGlobalfoundries Inc.
InventorsBin Yang, Man Fai NG
Life of this patent
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Abstract
Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a <100> crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.
Claims20
A semiconductor device comprising:
- a region of semiconductor material;
- a gate structure overlying the region of semiconductor material, wherein a width of the gate structure is aligned with a <100> crystal direction of the semiconductor material;
- and
- first and second stressor regions formed in the region of semiconductor material about the gate structure.
1 more element
A semiconductor device comprising:
- a region of semiconductor material;
- a gate structure overlying the region of silicon material, wherein a width of the gate structure is aligned with a <100> crystal direction of the semiconductor material, wherein the <100> crystal direction is selected from a group consisting of a crystal direction of the semiconductor material, a crystal direction of the semiconductor material, and a crystal direction of the semiconductor material, and wherein the gate structure has a length aligned with a <010> crystal direction of the semiconductor material;
- first and second stressor regions formed in the region of semiconductor material about the gate structure.
- a first source/drain extension adjacent to the first stressor region, the first source/drain extension having a first conductivity type;
- a second source/drain extension adjacent to the second stressor region, the second source/drain extension having the first conductivity type, wherein a channel region of semiconductor material underlying the gate structure has a second conductivity type and is disposed between the first source/drain extension and the second source/drain extension.
2 more elements
A semiconductor device comprising:
- a region of semiconductor material;
- a gate structure overlying the region of silicon material, wherein a width of the gate structure is aligned with a <100> crystal direction of the semiconductor material, wherein the <100> crystal direction is selected from a group consisting of a crystal direction of the semiconductor material, a crystal direction of the semiconductor material, and a crystal direction of the semiconductor material;
- a spacer about sidewalls of the gate structure;
- and
- first and second silicon carbon stressor regions formed in the region of semiconductor material about the gate structure and the spacers. a first source/drain extension adjacent to the first stressor region, the first source/drain extension having N-type ions therein;
- a second source/drain extension adjacent to the second stressor region, the second source/drain extension having the first conductivity type, wherein a channel region of semiconductor material underlying the gate structure has a second conductivity type and is disposed between the first source/drain extension and the second source/drain extension.
3 more elements
Dependencies are inferred from the claim text.