Semiconductor light emitting device and method of fabricating semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a light emitting element comprising a nitride-based III-V compound semiconductor on a substrate, the light emitting element having a light extraction surface;
• a first electrode layer on the light extraction surface;
• a second electrode layer on a surface opposite to the light extraction surface of the light emitting element;
• a seed electrode layer configured to cover the entire surface of the second electrode layer;
• and
• a plated layer on the seed electrode layer,
• the light emitting element comprises:
• a light emitting layer;
• a first conductive type semiconductor layer disposed between the light emitting layer and the first electrode layer and
• a second conductive type semiconductor layer disposed between the light emitting layer and the second electrode layer,
• the light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.