Semiconductor light emitting device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorYasuharu SUGAWARA
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorYasuharu SUGAWARA
Estimating the term…
According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.
A semiconductor light emitting device comprising:
A method for manufacturing a semiconductor light emitting device comprising:
Dependencies are inferred from the claim text.