REO-Si TEMPLATE WITH INTEGRATED REO LAYERS FOR LIGHT EMISSION

A III-N on silicon light emitting diode constructed to emit light in the visible range comprising:

• a crystalline silicon substrate having an upper surface and a lower surface;
• a layer of single crystal III-N nitride with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface;
• a REO-Si template with an upper surface mated to the lower surface of the layer of single crystal III-N nitride and a lower surface designed to approximately crystal lattice match the upper surface of the silicon substrate;
• and
• a light emission layer of rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range, and a lower surface of the light emission layer being mated to the upper surface of the crystalline silicon substrate and the upper surface of the light emission layer being mated to the lower surface of the REO-Si template.

A method of fabricating a III-N on silicon light emitting diode constructed to emit light in the visible range comprising the steps of and not necessarily in the order listed:

• providing a crystalline silicon substrate having an upper surface and a lower surface;
• epitaxially growing a layer of single crystal III-N nitride with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface;
• epitaxially growing a REO-Si template with an upper surface mated to the lower surface of the layer of single crystal III-N nitride and a lower surface designed to approximately crystal lattice match the upper surface of the silicon substrate;
• epitaxially growing a light emission layer of single crystal rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range;
• and
• mating the lower surface of the REO-Si template to one of the upper surface of the crystalline silicon substrate with the light emission layer integrated into the REO-Si template or to an upper surface of the light emission layer with a lower surface of the light emission layer mated to the crystalline silicon substrate.

A method of fabricating a III-N on silicon light emitting diode constructed to emit light in the visible range comprising the steps of:

• providing a crystalline silicon substrate having an upper surface and a lower surface;
• epitaxially growing a light emission layer of single crystal rare earth oxide on the upper surface of the crystalline silicon substrate, and selecting the light emission layer to receive and absorb light at a first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range;
• epitaxially growing a REO-Si template on the light emission layer with a lower surface mated to an upper surface of the light emission layer;
• and
• epitaxially growing a layer of single crystal III-N nitride on an upper surface of the REO-Si template, designing the layer of single crystal III-N nitride to emit light at the first wavelength through a lower surface, and forming a light emitting diode in/on the layer of single crystal III-N nitride.