Ambipolar transistor device structure and method of forming the same
AssigneeIndustrial Technology Research Institute
InventorsChao-Feng Sung, Yen-Min Hsieh
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Abstract
An ambipolar transistor device structure suitable for use in an integrated circuit is disclosed. An electron blocking layer or a hole blocking layer is interposed between a source/drain and an ambipolar active layer. Therefore, a unipolar device electric property may be extracted from the ambipolar active layer, which may be suitably applied to the design of a logic circuit. The manufacturing method of the disclosure is simple, only needing one patterning step, so as to effectively improve the performance of the ambipolar device.
Claims50
An ambipolar transistor device structure, comprising:
- a gate, disposed on a substrate;
- a source and a drain, disposed on the substrate and located at two sides of the gate;
- a dielectric layer, disposed between the gate and each of the source and the drain;
- an ambipolar semiconductor layer, at least disposed between the source and the drain;
- and
- a carrier blocking layer, disposed between the ambipolar semiconductor layer and each of the source and the drain.
A method of forming an ambipolar transistor device structure, comprising:
- forming a source and a drain on a substrate;
- forming a carrier blocking layer and an ambipolar semiconductor layer on the substrate and at least between the source and the drain;
- forming a dielectric layer on the ambipolar semiconductor layer;
- and
- forming a gate on the dielectric layer between the source and the drain, wherein the dielectric layer isolates the gate, the source and the drain from each other.
A method of forming an ambipolar transistor device structure, comprising:
- providing a substrate, wherein the substrate has a first region and a second region;
- forming a first source and a first drain on the substrate in the first region;
- forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the substrate in the first region and the second region;
- patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a first stack structure covering the first source and the first drain on the substrate in the first region and form a second stack structure on the substrate in the second region;
- forming a second source and a second drain on the second stack structure;
- forming a dielectric layer on the substrate to cover the first stack structure and the second stack structure;
- and
- forming a first gate on the dielectric layer between the first source and the first drain and forming a second gate on the dielectric layer between the second source and the second drain.
A method of forming an ambipolar transistor device structure, comprising:
- forming an ambipolar semiconductor layer and a carrier blocking layer on a substrate;
- forming a source and a drain on the carrier blocking layer;
- forming a dielectric layer on the substrate to cover the source and the drain;
- and
- forming a gate on the dielectric layer between the source and the drain.
A method of forming an ambipolar transistor device structure, comprising:
- forming a gate on a substrate;
- forming a dielectric layer on the substrate to cover the gate;
- forming a source and a drain on the dielectric layer at two sides of the gate;
- and
- forming a carrier blocking layer and an ambipolar semiconductor layer on the dielectric layer and at least between the source and the drain.
A method of forming an ambipolar transistor device structure, comprising:
- forming a gate on a substrate;
- forming a dielectric layer on the substrate to cover the gate;
- forming an ambipolar semiconductor layer and a carrier blocking layer on the dielectric layer;
- and
- forming a source and a drain on the carrier blocking layer at two sides of the gate.
A method of forming an ambipolar transistor device structure, comprising:
- providing a substrate, wherein the substrate has a first region and a second region;
- forming a first gate on the substrate in the first region and forming a second gate on the substrate in the second region;
- forming a dielectric layer on the substrate to cover the first gate and the second gate;
- forming a first source and a first drain on the dielectric layer in the first region;
- forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the substrate in the first region and the second region;
- patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a first stack structure covering the first source and the first drain on the substrate in the first region and form a second stack structure on the substrate in the second region;
- and
- forming a second source and a second drain on the second stack structure.
Dependencies are inferred from the claim text.