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US 2013/0153902 A1Published application
Structures including passivated germanium
AssigneeRound Rock Research, LLC
InventorsLeonard Forbes, Kie Y. Ahn
Life of this patent
Estimating the term…
Abstract
A passivated germanium surface that is a germanium carbide material formed on and in contact with the germanium material. A semiconductor device structure having the passivated germanium having germanium carbide material on the substrate surface is also disclosed.
Claims16
A semiconductor device structure, comprising:
- a substrate having, at least formed on its top surface, a germanium material and an amorphous germanium carbide material having the composition GexC1-x:H, where 0 is less than x and x is less than 1, wherein the amorphous germanium carbide material is in contact with at least a portion of the germanium material and wherein the germanium material and the amorphous germanium carbide material are formed on the top surface of the substrate;
- a source region formed in the germanium material;
- a drain region formed in the germanium material;
- wherein the source and drain regions are separated by a channel region;
- and
- a gate region formed over the amorphous germanium carbide material over which is formed a conductive layer.
3 more elements
A semiconductor device comprising:
- a substrate comprising a germanium material formed at least on the top surface of the substrate;
- an amorphous germanium carbide material having the composition GexC1-x:H, where x is greater than 0 and less than 1 and wherein the amorphous germanium carbide material is in contact with at least a portion of the germanium material;
- and
- at least one integrated circuit on a surface of a semiconductor device structure.
1 more element
A semiconductor device structure, comprising:
- a substrate having, formed on its top surface, a germanium material and an amorphous passivated surface having the composition GexC1-x:H, wherein x is greater than zero and less than 1, wherein the amorphous passivated surface is in contact with at least a portion of the germanium material, and wherein the germanium material and the amorphous germanium carbide material are formed on the top surface of the substrate;
- a source region formed in the germanium material;
- a drain region formed in the germanium material;
- wherein the source and drain regions are separated by a channel region;
- and
- a gate region formed over the amorphous germanium carbide material over which is formed a conductive layer.
- a germanium material and an amorphous germanium carbide material having the composition GexC1-x:H wherein x is greater than zero and less than 1 and wherein the amorphous germanium material is in contact with at least a portion of the germanium material.
4 more elements
Dependencies are inferred from the claim text.