Semiconductor device having plural semiconductor chips

A semiconductor device comprising:

• a first chip including first and second surfaces opposed to each other, first, second and third terminals on the first surface, and a fourth terminal on the second surface, the first and fourth terminals being electrically coupled to each other through a penetration electrode penetrating a semiconductor substrate of the first chip, and a first internal node of which an electrical potential being changed in response to an electrical potential of the first terminal;
• and
• a second chip stacked with the first chip, the second chip including a third surface facing to the second surface of the first chip, a fourth surface opposed to the third surface, a fifth terminal on the third surface electrically coupled to the fourth terminal of the first chip, sixth and seventh terminals on the third surface, and a second internal node of which an electrical potential being changed in response to an electrical potential of the fifth terminal;
• the first internal node of the first chip being electrically coupled to both the second terminal of the first chip and the sixth terminal of the second chip, the second internal node of the second chip being electrically coupled to both the third terminal of the first chip and the seventh terminal of the second chip.