Display and electronic unit
AssigneeSony Corporation
InventorsNarihiro Morosawa, Toshiaki Arai
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Abstract
A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.
Claims20
A display device comprising:
- a display element;
- a transistor configured to drive the display element, the transistor including a channel region;
- and
- a retention capacitor,
- wherein an oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including
- a first region formed in the channel region of the transistor, and
- a second region having a lower resistance than that of the first region, the second region formed in the areas of the transistor and retention capacitor other than in the channel region.
An electronic apparatus comprising:
- a display device including
- a display element,
- a transistor configured to drive the display element, the transistor including a channel region, and
- a retention capacitor,
- wherein a first oxide semiconductor film is formed in areas of the transistor and retention capacitor including the channel region, and a second lower resistance oxide semiconductor film is formed on the first oxide semiconductor film in the areas of the transistor and retention capacitor except in the channel region.
A method of manufacturing a display device including a display element, a transistor configured to drive the display element, and a retention capacitor, the method comprising:
- forming an oxide semiconductor film in areas across the transistor and the retention capacitor, the oxide semiconductor film including
- a first region formed in a channel region of the transistor, and
- a second region having a lower resistance than that of the first region, the second region formed in the areas of the transistor and retention capacitor other than in the channel region.
Dependencies are inferred from the claim text.